A Study of On-state Breakdown Decreasing of nLDMOSFETs by Hole Current Increase Depending on Drain Pulse Rise Time

The introduction of a p-type RESURF (REduced SURface Field) layer under an n-type drift region is a well-known means to improve the specific on-resistance (R_{\mathbf{sp}}) versus the off-state breakdown voltage (BV_{\mathbf{off}}) trade-off and reduce hot carrier injection (HCI) degradation in n-ch...

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Bibliographic Details
Main Authors: Mori, Takahiro, Yamaguchi, Tomonari, Kamino, Takeshi, Tsuruta, Junji, Okushima, Mototsugu, Sayama, Hirokazu, Iizuka, Koji
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Electric breakdown
Hot carrier injection
Human computer interaction
Impact ionization
Integrated circuits
Layout
nLDMOSFET
on-state breakdown
p-type RESURF layer
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Summary:The introduction of a p-type RESURF (REduced SURface Field) layer under an n-type drift region is a well-known means to improve the specific on-resistance (R_{\mathbf{sp}}) versus the off-state breakdown voltage (BV_{\mathbf{off}}) trade-off and reduce hot carrier injection (HCI) degradation in n-channel LDMOSFETs (nLDMOSFETs). The p-type RESURF layer also works as a punch-through stopper to maintain sufficient source/drain (S/D) negative bias capability to sub. However, the short rise time (T_{\mathbf{r}}) of the pulse input to drain has the disadvantage of decreasing the on-state breakdown voltage (BV_{\mathbf{on}}) with a large channel width layout. A mechanism for the decrease in the BV_{\mathbf{on}} for an nLDMOSFET with a p-type RESURF layer is clarified, and a method to suppress the decrease in BV_{\mathbf{on}} is proposed.
ISSN:1946-0201
DOI:10.1109/ISPSD46842.2020.9170123