Which is harder SOA test for SiC MOSFET to do Unclamped Inductive Switching (UIS) or Unloaded Short Circuit mode Switching (USCS)? Does UIS play a role of USCS?

It is tough for SiC MOSFET to maintain the same time width (tw) of Unloaded Short Circuit mode Switching (USCS), which we define as the index of the Short Circuit Safety Operation Area (SCSOA) evaluation comparing with Unclamped Inductive Switching (UIS), as Si IGBT. Although VDS-ID (JD) locus of US...

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Bibliographic Details
Main Authors: Hasegawa, Kazuhiko, Taguchi, Kensuke, Kagawa, Yasuhiro, Suekawa, Eisuke, Kaguchi, Naoto, Ata, Yasuo, Haruguchi, Hideki, Nakashima, Yu, Minato, Tadaharu
Format: Conference Proceeding
Language:English
Subjects:
Insulated gate bipolar transistors
Integrated circuits
MOSFET
Power semiconductor devices
Safety
Short Circuit Safety Operation Area (SCSOA)
SiC
Silicon
Silicon carbide
Unclamped Inducting Switching (UIS)
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Summary:It is tough for SiC MOSFET to maintain the same time width (tw) of Unloaded Short Circuit mode Switching (USCS), which we define as the index of the Short Circuit Safety Operation Area (SCSOA) evaluation comparing with Unclamped Inductive Switching (UIS), as Si IGBT. Although VDS-ID (JD) locus of USCS is different from that of UIS, UIS and USCS (SCSOA) seem to have almost the same effects by taking account of the JD dependence. Moreover, UIS has the unique characteristic to detect the silent defects.
ISSN:1946-0201
DOI:10.1109/ISPSD46842.2020.9170172