S-Type Locally Active Memristor-Based Periodic and Chaotic Oscillators

S-type locally-active memristor (LAM) has a great potential for brain- inspired neuromorphic computing, where the S-type LAM-based oscillator is a fundamental building block. Concerning the S-type LAM, this paper constructs a material-independent model in simple mathematical expression, which can be...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2020-12, Vol.67 (12), p.5139-5152
Main Authors: Liang, Yan, Wang, Guangyi, Chen, Guanrong, Dong, Yujiao, Yu, Dongsheng, Iu, Herbert Ho-Ching
Format: Article
Language:English
Subjects:
Bifurcation
Bifurcation theory
Capacitance
chaotic circuit
Construction materials
Dynamic characteristics
Emulators
Equivalent circuits
Frequency ranges
Frequency response
Hopf bifurcation
Integrated circuit modeling
Liapunov exponents
local activity
Mathematical analysis
Mathematical model
Mathematical models
Memristor
Memristors
Nonlinear dynamical systems
nonlinear dynamics
Oscillators
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Summary:S-type locally-active memristor (LAM) has a great potential for brain- inspired neuromorphic computing, where the S-type LAM-based oscillator is a fundamental building block. Concerning the S-type LAM, this paper constructs a material-independent model in simple mathematical expression, which can be relatively easily analyzed. By biasing the memristor into the locally- active region, and connecting it with a capacitor, a second-order oscillator can be built. The small-signal equivalent circuit of the memristor and its frequency response are applied to determine the period oscillation frequency range and compensation capacitance. Hopf bifurcation theory is used to analyze oscillation mechanism of the second-order circuit and appropriate capacitance. By adding an extra inductor into the second-order oscillator, a novel third-order chaotic circuit is developed, where a saddle-focus is derived to create chaos. Its dynamic characteristics are investigated via Lyapunov exponents, bifurcation diagrams, dynamic route map, and so on. The local activities of the single memristor, second-order oscillator, and third-order chaotic circuit are verified through the mathematical analysis. Finally, physical circuit realizations of the S- type LAM-based oscillators, including the memristor emulator, are presented. Both simulation and experimental results demonstrate the practicability of the proposed mathematical model and the validity of the theoretical analysis.
ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2020.3017286