Electrostatic Control and Entanglement of CMOS Position-Based Qubits

In this paper we demonstrate electrostatic control and feasibility of entanglement in CMOS qubits. We present both single particle and multi-particle methodologies to describe quantum transport using a time-dependent Hamiltonian assuming one spatial degree of freedom. The developed models predict ma...

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Bibliographic Details
Main Authors: Giounanlis, Panagiotis, Sokolov, Andrii, Blokhina, Elena, Koskin, Eugene, Bashir, Imran, Leipold, Dirk, Staszewski, R. Bogdan
Format: Conference Proceeding
Language:English
Subjects:
charge qubit
entanglement
Logic gates
Mathematical model
Numerical models
numerical simulations
position-based qubit
Potential energy
quantum computer
Quantum computing
Quantum dots
Semiconductor device modeling
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Summary:In this paper we demonstrate electrostatic control and feasibility of entanglement in CMOS qubits. We present both single particle and multi-particle methodologies to describe quantum transport using a time-dependent Hamiltonian assuming one spatial degree of freedom. The developed models predict maximally entangled states of electrons controlled electrostatically by external driving fields and interacting via the Coulomb force.
ISSN:2158-1525
2158-1525
DOI:10.1109/ISCAS45731.2020.9180721