Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology

This paper presents a high dynamic range E-band power detector in a 0.13 μm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from −25 dBm to +10 dBm. It shows le...

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Bibliographic Details
Main Authors: Ahamed, Raju, Varonen, Mikko, Parveg, Dristy, Najmussadat, Md, Kantanen, Mikko, Halonen, Kari A. I.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS
BiCMOS integrated circuits
Detectors
Dynamic range
E-band
heterojunction bipolar transistor (HBT)
Impedance matching
millimeter-wave
MMIC
power detector
Radio frequency
Silicon germanium
Voltage measurement
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Summary:This paper presents a high dynamic range E-band power detector in a 0.13 μm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from −25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm 2 .
ISSN:2158-1525
2158-1525
DOI:10.1109/ISCAS45731.2020.9181170