A 5 GHz 0.5 V Hybrid Class-B/F−1 CMOS Oscillator With −147 dBc/Hz Phase Noise at 10 MHz Offset Using Body-Biased 22 nm FDSOI

This work presents a self-biased 5 GHz hybrid class-B/F −1 oscillator for low phase noise and robust startup. The design exploits the concurrent conduction of nMOS and pMOS, when placed on differential sides, to form a differential-mode (DM) high-quality-factor second-harmonic resonator for low phas...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2020-10, Vol.30 (10), p.973-976
Main Authors: El-Aassar, Omar, Rebeiz, Gabriel M.
Format: Article
Language:English
Subjects:
CMOS
Common-mode (CM) resonance
figure~of merit (FoM)
fully depleted silicon-on-insulator (FDSOI) CMOS
Logic gates
low phase noise
Metal oxide semiconductors
MOS devices
Noise
Noise reduction
Phase noise
Radio frequency
Resonators
Robustness
Silicon-on-insulator
Topology
transformer
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Summary:This work presents a self-biased 5 GHz hybrid class-B/F −1 oscillator for low phase noise and robust startup. The design exploits the concurrent conduction of nMOS and pMOS, when placed on differential sides, to form a differential-mode (DM) high-quality-factor second-harmonic resonator for low phase noise. The same resonator is shared between the main core (class-F −1 ) and the startup core (class-B), to allow phase noise reduction. The hybrid CMOS oscillator is fabricated in 22 nm fully depleted silicon-on-insulator (FDSOI) using thin-oxide-only devices, operated from 0.5 V supply, and achieves a phase noise
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2020.3017740