Quantum phenomena in field-effect-controlled semiconductor nanostructures

Quantum effects resulting from sub-100 nm features in planar, field-effect-controlled semiconductor structures or devices are discussed, and experimental results are compared with calculations. These devices are based on the GaAs-AlGaAs modulation-doped field-effect transistor (MODFET) and include g...

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Bibliographic Details
Published in:Proceedings of the IEEE 1991-08, Vol.79 (8), p.1106-1116
Main Authors: Ismail, K.E., Bagwell, P.F., Orlando, T.P., Antoniadis, D.A., Smith, H.I.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Electrons
Epitaxial layers
Exact sciences and technology
Fabrication
FETs
MODFETs
Quantum computing
Quantum dots
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor nanostructures
Switches
Transistors
Wires
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Summary:Quantum effects resulting from sub-100 nm features in planar, field-effect-controlled semiconductor structures or devices are discussed, and experimental results are compared with calculations. These devices are based on the GaAs-AlGaAs modulation-doped field-effect transistor (MODFET) and include grating-gate lateral surface superlattices. (LSSLs), grid-gate LSSLs, planar-resonant-tunneling field-effect transistors (PRESTFETs), multiple parallel quantum wires (MPQWs), and arrays of quantum dots (QDs). In contrast to conventional, epitaxially grown vertical quantum structures, planar structures offer the opportunity for electron confinement in three, two, and one dimensions and the flexibility of electrical tuning of quantum effects.< >
ISSN:0018-9219
1558-2256
DOI:10.1109/5.92070