Capacitive Modulator Design Optimization Using Si and Strained-SiGe for Datacom Applications

Silicon photonics has become an industrial reality for datacom applications. Nevertheless, as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The efficiency can be enhanced by using strained-SiGe or by using a semiconductor insulator semiconductor (SIS) architectur...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2021-05, Vol.27 (3), p.1-8
Main Authors: Charlet, Ismael, Desieres, Yohan, Marris-Morini, Delphine, Boeuf, Frederic
Format: Article
Language:English
Subjects:
Algorithms
Capacitive modulator
Design optimization
electro-refractive modulator
Engineering Sciences
Modulators
Optical modulation
Optical refraction
Optical waveguides
Optics
Optimization
Photonic
Silicon
Silicon germanides
Silicon germanium
silicon photonics
SIS (semiconductors)
strained-SiGe
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Summary:Silicon photonics has become an industrial reality for datacom applications. Nevertheless, as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The efficiency can be enhanced by using strained-SiGe or by using a semiconductor insulator semiconductor (SIS) architecture. In this paper, we develop a model based on a perturbative approach to optimize capacitive modulator using full-Si or including a thin layer of strained SiGe. This model is coupled with an optimization algorithm in order to estimate the highest optimal modulation amplitude for different operating frequencies.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2020.3028447