Numerical simulation on the dependence of carrier transport characteristics on the thickness of the absorbing layer for GaAs-based blocked impurity band (BIB) terahertz detectors

The dependence of carrier transport characteristics on the thickness of the absorbing layer for Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector has been investigated in detail. It is found that responsivity linearly increases with the increased thickness of absorbing layer fir...

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Bibliographic Details
Main Authors: Wang, Xiaodong, Chen, Yulu, Wang, Bingbing, Zhang, Chuansheng, Chen, Xiaoyao, Zhang, Haoxing
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Blocked-impurity-band (BIB)
Cathodes
Dark current
Detectors
Gallium arsenide
Gallium Arsenide (GaAs)
Numerical models
Numerical simulation
Responsivity
Substrates
Terahertz detector
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Description
Summary:The dependence of carrier transport characteristics on the thickness of the absorbing layer for Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector has been investigated in detail. It is found that responsivity linearly increases with the increased thickness of absorbing layer first, and after achieving a peak value, and then starts to dropping slowly.
ISSN:2158-3242
DOI:10.1109/NUSOD49422.2020.9217733