A DC to 194-GHz Distributed Mixer in 250-nm InP DHBT Technology

A distributed mixer was designed and fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology for 200-GHz bandwidth digital-to-analog converters. A method using non-uniform emitter resistors in the mixer unit cells is proposed to compensate for degradati...

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Bibliographic Details
Main Authors: Jyo, Teruo, Nagatani, Munehiko, Ida, Minoru, Mutoh, Miwa, Wakita, Hitoshi, Terao, Naoki, Nosaka, Hideyuki
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
bandwidth extension
Degradation
Digital-analog conversion
Distributed mixer
double side band mixer
III-V semiconductor materials
InP DHBT
Microwave technology
Microwave transistors
Resistors
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Summary:A distributed mixer was designed and fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology for 200-GHz bandwidth digital-to-analog converters. A method using non-uniform emitter resistors in the mixer unit cells is proposed to compensate for degradation of conversion gain (CG). The fabricated mixer achieves a bandwidth of 194 GHz from DC to 194 GHz with a CG of -3 dB, which is the widest bandwidth ever reported to the best of the authors' knowledge.
ISSN:2576-7216
DOI:10.1109/IMS30576.2020.9223832