The quantitative assessment of stress-induced voiding in process qualification

Stress-induced voiding was studied on submicron aluminum interconnects. A phenomenological model is derived to describe the median time of failures which are caused by the growth of stress-induced voids. Based on this model, a procedure for lifetime prediction is proposed. Furthermore, the influence...

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Bibliographic Details
Main Authors: Fischer, A.H., Zitzelsberger, A.E.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum
Current density
Electrical resistance measurement
Electromigration
Equations
Integrated circuit interconnections
Qualifications
Temperature
Tensile stress
Thermal stresses
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Summary:Stress-induced voiding was studied on submicron aluminum interconnects. A phenomenological model is derived to describe the median time of failures which are caused by the growth of stress-induced voids. Based on this model, a procedure for lifetime prediction is proposed. Furthermore, the influence of stress-induced voids on the electromigration performance is discussed. It is shown that a reduced current density exponent is found in stress-induced void damaged lines, leading to a decrease of electromigration lifetimes.
DOI:10.1109/RELPHY.2001.922924