Soft breakdown triggers for large area capacitors under constant voltage stress

This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm/sup 2/) with 1.8 to 12 nm gate oxide thickness (with negative V/sub G/). We conclude that in the studied range, breakdown is identified more reliably with a current step trigge...

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Bibliographic Details
Main Authors: Schmitz, J., Kretschmann, H.J., Tuinhout, H.P., Woerlee, P.H.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Capacitors
Carbon capture and storage
Dielectric breakdown
Electric breakdown
Laboratories
MOS devices
Stress
Testing
Time measurement
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Summary:This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm/sup 2/) with 1.8 to 12 nm gate oxide thickness (with negative V/sub G/). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.
DOI:10.1109/RELPHY.2001.922932