An oxygen ion dose dependence of dielectric constant and surface roughness of titanium oxide films deposited on silicon by an ion beam assisted deposition technique

Titanium oxide, TiO/sub x/, films with high dielectric constants were deposited on Si surfaces by an ion beam assisted deposition technique. The dielectric constants of the TiO/sub x/ films became higher with decreasing the fraction of oxygen ions during the deposition and with increasing substrate...

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Bibliographic Details
Main Authors: Yokota, K., Nakamura, K., Sasagawa, T., Kamatani, T., Miyashita, F.
Format: Conference Proceeding
Language:English
Subjects:
Dielectric constant
Dielectric substrates
High-K gate dielectrics
Ion beams
Rough surfaces
Semiconductor films
Surface morphology
Surface roughness
Temperature
Titanium
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Summary:Titanium oxide, TiO/sub x/, films with high dielectric constants were deposited on Si surfaces by an ion beam assisted deposition technique. The dielectric constants of the TiO/sub x/ films became higher with decreasing the fraction of oxygen ions during the deposition and with increasing substrate temperature, while the surface morphologies of the TiO/sub x/ films became rougher. The dielectric constants and the surface roughness depended on the fraction of Ti-O bonds in the TiO/sub x/ films.
DOI:10.1109/IIT.2000.924160