Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes

We present a Verilog-A model accounting for the temporal avalanche buildup and its statistics in Single-Photon Avalanche Diodes (SPADs). This physics-based approach is compared to TCAD mixed-mode analyzing predictions, as well as measurements. The buildup that can be in the order of hundreds picosec...

Full description

Saved in:
Bibliographic Details
Main Authors: oussaiti, Y., Rideau, D., Manouvrier, J.R., Quenette, V., Mamdy, B., Buj, C., Grebot, J., Wehbe-Alause, H., Lopez, A., Mugny, G., Agnew, M., Lacombe, E., Pala, M., Dollfus, P.
Format: Conference Proceeding
Language:English
Subjects:
avalanche dynamics
Numerical models
Power demand
quenching circuits
Semiconductor device measurement
Semiconductor process modeling
Sensors
Silicon
Silicon SPAD
TCAD
Transistors
Verilog-A code
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a Verilog-A model accounting for the temporal avalanche buildup and its statistics in Single-Photon Avalanche Diodes (SPADs). This physics-based approach is compared to TCAD mixed-mode analyzing predictions, as well as measurements. The buildup that can be in the order of hundreds picoseconds, affects the statistical pulse width distribution, which is experimentally verified. Furthermore, we address in detail the voltage swing across the device during avalanche and its quenching, studying its impact on power consumption. This model can help a chip designer to optimize circuits for quenching the SPAD photodiode.
ISSN:1946-1577
DOI:10.23919/SISPAD49475.2020.9241648