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Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode

In lateral power diodes, the conductivity modulation mechanism can pave the way to the demonstration of surge current capability. In a Hybrid Anode Diode concept with a p-GaN layer, an anode contact on p-GaN layer can be a source of hole injection that increases the electron density at AlGaN/GaN int...

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Bibliographic Details
Main Authors: Atmaca, Gokhan, Jaud, Marie-Anne, Jerome, Julien Buckley, Yvon, Arnaud, Collard, Emmanuel
Format: Conference Proceeding
Language:English
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Summary:In lateral power diodes, the conductivity modulation mechanism can pave the way to the demonstration of surge current capability. In a Hybrid Anode Diode concept with a p-GaN layer, an anode contact on p-GaN layer can be a source of hole injection that increases the electron density at AlGaN/GaN interface. The role of p-GaN layer on the surge current capability and its demonstration are investigated through TCAD simulations that explain the role of hole barrier tunneling at anode metal/p-GaN interface. These simulations show that surge current can occur in case of Ohmic p-GaN contact as the injected holes can lead to create additional electron density in the channel as well as a hole current to support the total diode current.
ISSN:1946-1577
DOI:10.23919/SISPAD49475.2020.9241673