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Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode
In lateral power diodes, the conductivity modulation mechanism can pave the way to the demonstration of surge current capability. In a Hybrid Anode Diode concept with a p-GaN layer, an anode contact on p-GaN layer can be a source of hole injection that increases the electron density at AlGaN/GaN int...
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Main Authors: | , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | In lateral power diodes, the conductivity modulation mechanism can pave the way to the demonstration of surge current capability. In a Hybrid Anode Diode concept with a p-GaN layer, an anode contact on p-GaN layer can be a source of hole injection that increases the electron density at AlGaN/GaN interface. The role of p-GaN layer on the surge current capability and its demonstration are investigated through TCAD simulations that explain the role of hole barrier tunneling at anode metal/p-GaN interface. These simulations show that surge current can occur in case of Ohmic p-GaN contact as the injected holes can lead to create additional electron density in the channel as well as a hole current to support the total diode current. |
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ISSN: | 1946-1577 |
DOI: | 10.23919/SISPAD49475.2020.9241673 |