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Transient simulation of graphene FET gated by electrolyte medium

We present a numerical study on the electrical conduction characteristics of the graphene channel FET with electrolyte medium for gate control. By using the tight-binding formalism to calculate the electronic band structure and the Nernst-Planck-Poisson (NPP) equation to calculate the formation of t...

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Main Authors:	Arihori, Koki, Ogawa, Matsuto, Souma, Satofumi, Sato-Iwanaga, Junko, Suzuki, Masa-aki
Format:	Conference Proceeding
Language:	English
Subjects:	Electrolytes Field effect transistors Graphene Liquids Logic gates Mathematical model Transient analysis
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creator	Arihori, Koki Ogawa, Matsuto Souma, Satofumi Sato-Iwanaga, Junko Suzuki, Masa-aki
description	We present a numerical study on the electrical conduction characteristics of the graphene channel FET with electrolyte medium for gate control. By using the tight-binding formalism to calculate the electronic band structure and the Nernst-Planck-Poisson (NPP) equation to calculate the formation of the electric double layer at the interface of the ionic liquid, we found that the drain current after the EDL is formed is almost independent of the IL thickness, while the transient behavior is greatly influenced by the thickness of ionic liquid. In addition, we present our simulation results for the case of solid electrolyte gate, where the effect of finite ion concentration in the solid electrolyte has been successfully taken into account appropriately by using the extended NPP equation.
doi_str_mv	10.23919/SISPAD49475.2020.9241691
format	conference_proceeding
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identifier	EISSN: 1946-1577
ispartof	2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.367-370
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source	IEEE Xplore All Conference Series
subjects	Electrolytes Field effect transistors Graphene Liquids Logic gates Mathematical model Transient analysis
title	Transient simulation of graphene FET gated by electrolyte medium
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