On extensive pump handling of chemical-mechanical polishing slurries

The effects of extensive pump handling on chemical-mechanical polishing (CMP) slurries have been investigated in this study. A number of common CMP slurries were recirculated in bellows pump loops. Large particle counts (LPC) and particle size distributions (PSDs) were generated using commercially a...

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Bibliographic Details
Main Authors: Singh, R.K., Roberts, B.R.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Bellows
Chemicals
Electronics
Exact sciences and technology
Inorganic materials
Linear predictive coding
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shearing
Silicon compounds
Slurries
Solids
Testing
Vacuum systems
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Summary:The effects of extensive pump handling on chemical-mechanical polishing (CMP) slurries have been investigated in this study. A number of common CMP slurries were recirculated in bellows pump loops. Large particle counts (LPC) and particle size distributions (PSDs) were generated using commercially available instruments. The PSDs of oxide CMP slurries illustrate distinct, developing characteristics as a result of repeated shearing during handling. Unlike most silica oxide slurries, alumina- and ceria-based slurries do not seem to generate large particles due to pump handling over extended periods of time. Some of these slurries show a decrease in number of large particles or soft flakes in pump recirculation tests. The PSD and LPC data for an oxide slurry handling test in a vacuum-pressure-dispense-technology-based pump show generation of fewer large particles as compared to a bellows pump. This study also demonstrates that insignificant progressive settling of abrasive particles takes place inside the pump or in the pump loop during handling of quick-settling CMP slurries.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2001.925627