Case Study of SIMS analysis on Germanium isotopes and Arsenic implant sample

A previous study [1] on arsenic depth profiling in the silicon germanium alloys based structures using numerical approach was able to resolve mass interference between 28 Si 75 As-and ( 74 Ge 29 Si − , 73 Ge 30 Si − , 74 Ge 28 Si 1 H − , 73Ge 29 Si 1 H − , 72 Ge 30 Si 1 H − ), demonstrated that an a...

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Bibliographic Details
Main Authors: Ong, Kian Kok, Wang, Yun, Mo, Zhi Qiang
Format: Conference Proceeding
Language:English
Subjects:
Germanium
Germanium silicon alloys
Implants
Interference
Ions
Isotopes
Mass interference
Quantification
Secondary Ion Mass Spectrometry
Silicon
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Summary:A previous study [1] on arsenic depth profiling in the silicon germanium alloys based structures using numerical approach was able to resolve mass interference between 28 Si 75 As-and ( 74 Ge 29 Si − , 73 Ge 30 Si − , 74 Ge 28 Si 1 H − , 73Ge 29 Si 1 H − , 72 Ge 30 Si 1 H − ), demonstrated that an accurate arsenic profile with enough dynamic range can be obtained. The background subtraction algorithm is using un-doped silicon germanium alloy with lightest isotopes of Ge and Si with ion cluster 28 Si 70 Ge as reference. However, this numerical approach is not suitable for the current case study on mass interference of germanium and arsenic due to absence of 70 Ge implant, there is no available reference signal for background subtraction. In this paper, quantification approach was traced using 28 Si 75 As − and the abnormal profile was investigated using 30 Si 75 As − with high impact energy (hence high current) ion beam.
ISSN:1946-1550
DOI:10.1109/IPFA49335.2020.9260926