High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al 0.95 Ga 0.0 5 Sb barrier, which eliminates the junction leakage. We also suppressed the i...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2021, Vol.9, p.42-48
Main Authors: Kim, Sang-Hyeon, Roh, Ilpyo, Han, Jae-Hoon, Geum, Dae-Myeong, Kim, Seong Kwang, Kang, Soo Seok, Kang, Hang-Kyu, Lee, Woo Chul, Kim, Seong Keun, Hwang, Do Kyung, Song, Yun Heub, Song, Jin Dong
Format: Article
Language:English
Subjects:
Epitaxial growth
Gallium antimonides
GaSb
Hole mobility
III-V
Indium gallium arsenide
InGaAs passivation
Junctions
Leakage current
Leakage currents
Logic gates
MOSFET circuits
MOSFETs
Optimization
Passivation
Quantum wells
Temperature
Thin bodies
ultra-thin-body (UTB)
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Summary:In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al 0.95 Ga 0.0 5 Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In 0.53 Ga 0.47 As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility ( {\mu }_{\mathrm{ eff}} ) characteristics. As a result, the fabricated devices showed the lowest off-leakage current ( {I} _{\mathrm{ off}} ), subthreshold slope ( {S} . {S} .) and high \mu _{\mathrm{ eff}} among reported GaSb p-MOSFETs.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2020.3039370