Commercial Production of Low-k PZT film using Sputtering Method

Monocrystalline-like epitaxial PZT films for commercial use are described for piezoelectric MEMS applications. The composition ratios of Zr and Ti in the films are Morphotropic phase boundary (52:48) and Ti rich (42:58). The films with a thickness of 1 μm to 2 μm exhibit typical transverse piezoelec...

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Main Authors: Kiuchi, Mario, Miyake, Ryoma, Yoshida, Shinya, Tanaka, Shuji, Takemoto, Tsuyoshi, Yamaguchi, Yukitaka, Komaki, Kenji
Format: Conference Proceeding
Language:English
Subjects:
Actuators
Electrodes
epitaxial
Epitaxial growth
Micromechanical devices
Permittivity
piezoelectric
PZT
Silicon
sputtering
thin film
Zirconium
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creator Kiuchi, Mario
Miyake, Ryoma
Yoshida, Shinya
Tanaka, Shuji
Takemoto, Tsuyoshi
Yamaguchi, Yukitaka
Komaki, Kenji
description Monocrystalline-like epitaxial PZT films for commercial use are described for piezoelectric MEMS applications. The composition ratios of Zr and Ti in the films are Morphotropic phase boundary (52:48) and Ti rich (42:58). The films with a thickness of 1 μm to 2 μm exhibit typical transverse piezoelectric d31 coefficients of -185 pm/V and -149 pm/V, respectively. Relative dielectric permittivities are 430 and 264. Dielectric losses are 0.015 and 0.020. Both of films of figure-of-merit for MEMS device are more than 50 GPa. These films are commercially available for piezoelectric MEMS device development and production.
doi_str_mv 10.1109/SENSORS47125.2020.9278888
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subjects Actuators
Electrodes
epitaxial
Epitaxial growth
Micromechanical devices
Permittivity
piezoelectric
PZT
Silicon
sputtering
thin film
Zirconium
title Commercial Production of Low-k PZT film using Sputtering Method
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