Strain-compensated active region of high-power laser diodes based on AlxGayIn1-x-yAs/InP

High-power laser diodes based on Al x Ga y In 1-x-y As/InP heterostructures emitting in the region of 1.5 - 1.6 μm are actively used in various fields of human activity. This requires continuous improvement of their performance in the considered spectral range. The use of an strain-compensated activ...

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Bibliographic Details
Main Authors: Svetogorov, V. N., Ryaboshtan, Yu. L., Ladugin, M. A., Marmalyuk, A. A., Bagaeva, O. O., Romantsevich, V. I., Kurnosov, K. V., Kurnosov, V. D., Ivanov, A. V.
Format: Conference Proceeding
Language:English
Subjects:
laser diodes
Metalorganic vapor-phase epitaxy
multiple quantum wells
strained AlGaInAs/InP
wavelength 1.5-1.6 μm
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Summary:High-power laser diodes based on Al x Ga y In 1-x-y As/InP heterostructures emitting in the region of 1.5 - 1.6 μm are actively used in various fields of human activity. This requires continuous improvement of their performance in the considered spectral range. The use of an strain-compensated active region with a compression stress in the quantum well corresponding to + 1.4 % and tensile stress in the barrier layer corresponding to -0.8 % allowed to increase of internal and external differential quantum efficiency and obtain laser diodes with cw output power 4.2 W at 15 A. The output power in a pulsed regime reached 20 W (100 ns, 5 kHz) at a pump current 80 A.
ISSN:2642-5580
DOI:10.1109/ICLO48556.2020.9285608