New length scaling of current gain factor and characterization method for pocket implanted MOSFET's

A new analytical model is proposed for the gain factor channel length dependence /spl beta/(L) observed in advanced MOSFET device architectures with pocket implants. The idea consists of splitting the channel length domain into two regions of different mobility values. This approach has been impleme...

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Bibliographic Details
Main Authors: Minondo, M., Gouget, G., Juge, A.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Capacitance
Doping profiles
Implants
MOS devices
MOSFET circuits
Performance gain
Research and development
Semiconductor process modeling
Threshold voltage
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Summary:A new analytical model is proposed for the gain factor channel length dependence /spl beta/(L) observed in advanced MOSFET device architectures with pocket implants. The idea consists of splitting the channel length domain into two regions of different mobility values. This approach has been implemented in the BSIM3V3.2 model for the description of 0.18 /spl mu/m MOSFETs. Very good modeling in a large channel length range for N- and P-MOSFETs is demonstrated.
DOI:10.1109/ICMTS.2001.928673