Negative differential resistance in trench-type narrow InGaAs quantum wire

A trench-type narrow InGaAs quantum-wire field-effect transistor (QWRFET) on a V-grooved (311)A InP substrate has been successfully fabricated. The trench-type InGaAs QWR-FET with 50 nm gate-length has demonstrated clear negative differential resistance (NDR) characteristics based on real space tran...

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Bibliographic Details
Main Authors: Kee-Youn Jang, Sugaya, T., Matsumo, K., Shimizu, T., Ogura, M., Sugiyama, Y.
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
Electrons
Indium compounds
Indium gallium arsenide
Indium phosphide
Molecular beam epitaxial growth
Particle scattering
Space technology
Substrates
Wire
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Summary:A trench-type narrow InGaAs quantum-wire field-effect transistor (QWRFET) on a V-grooved (311)A InP substrate has been successfully fabricated. The trench-type InGaAs QWR-FET with 50 nm gate-length has demonstrated clear negative differential resistance (NDR) characteristics based on real space transfer (RST) with a high peak-to-valley current ratio (PVR=6.2) and a low onset voltage (V/sub NDR/) of 0.1 V. Such a low V/sub NDR/ has not been reported before.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2001.929195