Relation between plasma process-induced oxide failure fraction and antenna ratio

Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yiel...

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Bibliographic Details
Main Authors: Zhichun Wang, Scarpa, A., Salm, C., Kuper, F.
Format: Conference Proceeding
Language:English
Subjects:
Antenna theory
Circuit testing
CMOS process
CMOS technology
Degradation
Leakage current
Plasma devices
Plasma measurements
Protection
Semiconductor device modeling
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Summary:Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18 /spl mu/m CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits.
DOI:10.1109/PPID.2001.929968