TCAD Simulation of p-channel SOI-based Dielectric-Modulated Field-Effect Transistor Biochemical Sensor

In this work, a parametric study of the electrostatic effects of device parameters on the electrical performance of a p-channel Silicon-on-Insulator (SOI)-based Dielectric-Modulated Field-Effect Transistor (DMFET) biochemical sensor has been performed. Silvaco ® TCAD tool was used to carry out the s...

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Bibliographic Details
Main Authors: Singh, Akshit Deep, Sinha, Soumendu
Format: Conference Proceeding
Language:English
Subjects:
Biosensor
Biosensors
Dielectric constant
DMFET
Logic gates
Performance evaluation
SOI
Substrates
TCAD
Threshold voltage
Transconductance
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Summary:In this work, a parametric study of the electrostatic effects of device parameters on the electrical performance of a p-channel Silicon-on-Insulator (SOI)-based Dielectric-Modulated Field-Effect Transistor (DMFET) biochemical sensor has been performed. Silvaco ® TCAD tool was used to carry out the simulations for the p-channel biosensor. It is a well known fact that the presence of biomolecules leads to changes in surface charges and overall dielectric constant of gate oxide in a DMFET. To study the device sensitivity, we performed modulation of charge interaction and dielectric constant of gate oxide, which significantly affects the transconductance and threshold voltage of the field effect transistor. Moreover, the effect of substrate voltage, thickness of buried oxide layer (BOX), active layer and gate oxide on the device performance has been studied. It was observed that the applied substrate (backgate) voltage has the most significant effect on the electrical properties of p-channel SOI DMFET.
ISSN:2325-9418
DOI:10.1109/INDICON49873.2020.9342489