Effects of polysilicon shield on spiral inductors for silicon-based RF IC's

Increasing demands for more affordable personal mobile communication equipment have motivated research and development of low cost, high performance silicon-based on-chip inductors. Current silicon technology uses a conductive substrate, which causes unwanted energy dissipation. Inserting a patterne...

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Bibliographic Details
Main Authors: Sia, C.B., Yeo, K.S., Goh, W.L., Swe, T.N., Ng, C.Y., Chew, K.W., Loh, W.B., Chu, S., Chan, L.
Format: Conference Proceeding
Language:English
Subjects:
Active inductors
Costs
Energy dissipation
Mobile communication
Q factor
Radio frequency
Radiofrequency integrated circuits
Silicon
Spirals
Substrates
Online Access:Request full text
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Summary:Increasing demands for more affordable personal mobile communication equipment have motivated research and development of low cost, high performance silicon-based on-chip inductors. Current silicon technology uses a conductive substrate, which causes unwanted energy dissipation. Inserting a patterned polysilicon shield beneath inductors can help reduce this substrate loss. Effects of the polysilicon ground shield on inductor performance have been investigated. An inductor utilizing a new high resistivity polysilicon floating shield is shown in this paper to have improved inductive characteristics.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2001.934507