A novel, 1.2 kV trench clustered IGBT with ultra high performance

A new Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) is presented. This UMOS controlled thyristor employs a unique "self-clamping" feature to achieve current saturation at high gate voltages and to enable fast turn-off. Above the self-clamping voltage, the shallow trenches are...

Full description

Saved in:
Bibliographic Details
Main Authors: Spulber, O., Sweet, M., Vershinin, K., Luther-King, N., De Souza, M.M., Sankara Narayanan, E.M.
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Breakdown voltage
Cathodes
Electrical resistance measurement
Insulated gate bipolar transistors
Low voltage
MOSFET circuits
Power MOSFET
Testing
Thyristors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) is presented. This UMOS controlled thyristor employs a unique "self-clamping" feature to achieve current saturation at high gate voltages and to enable fast turn-off. Above the self-clamping voltage, the shallow trenches are protected from high potentials under all conditions. The simulation results of the TCIGBT based on 1.2 kV NPT technology indicate an improvement of 25% in the on state voltage drop and 28% in the turn-off loss in comparison to the state-of-the-art Trench IGBT. In the Field Stop technology, the forward drop is 1.1 V at 100 A/cm/sup 2/ and the switching losses at 400 K are 4.97 mJ, which are the lowest reported values for 1.2 kV devices.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2001.934620