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A novel, 1.2 kV trench clustered IGBT with ultra high performance
A new Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) is presented. This UMOS controlled thyristor employs a unique "self-clamping" feature to achieve current saturation at high gate voltages and to enable fast turn-off. Above the self-clamping voltage, the shallow trenches are...
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| creator | Spulber, O. Sweet, M. Vershinin, K. Luther-King, N. De Souza, M.M. Sankara Narayanan, E.M. |
| description | A new Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) is presented. This UMOS controlled thyristor employs a unique "self-clamping" feature to achieve current saturation at high gate voltages and to enable fast turn-off. Above the self-clamping voltage, the shallow trenches are protected from high potentials under all conditions. The simulation results of the TCIGBT based on 1.2 kV NPT technology indicate an improvement of 25% in the on state voltage drop and 28% in the turn-off loss in comparison to the state-of-the-art Trench IGBT. In the Field Stop technology, the forward drop is 1.1 V at 100 A/cm/sup 2/ and the switching losses at 400 K are 4.97 mJ, which are the lowest reported values for 1.2 kV devices. |
| doi_str_mv | 10.1109/ISPSD.2001.934620 |
| format | conference_proceeding |
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This UMOS controlled thyristor employs a unique "self-clamping" feature to achieve current saturation at high gate voltages and to enable fast turn-off. Above the self-clamping voltage, the shallow trenches are protected from high potentials under all conditions. The simulation results of the TCIGBT based on 1.2 kV NPT technology indicate an improvement of 25% in the on state voltage drop and 28% in the turn-off loss in comparison to the state-of-the-art Trench IGBT. In the Field Stop technology, the forward drop is 1.1 V at 100 A/cm/sup 2/ and the switching losses at 400 K are 4.97 mJ, which are the lowest reported values for 1.2 kV devices.</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 9784886860569</identifier><identifier>ISBN: 4886860567</identifier><identifier>EISSN: 1946-0201</identifier><identifier>DOI: 10.1109/ISPSD.2001.934620</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Breakdown voltage ; Cathodes ; Electrical resistance measurement ; Insulated gate bipolar transistors ; Low voltage ; MOSFET circuits ; Power MOSFET ; Testing ; Thyristors</subject><ispartof>Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. 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In the Field Stop technology, the forward drop is 1.1 V at 100 A/cm/sup 2/ and the switching losses at 400 K are 4.97 mJ, which are the lowest reported values for 1.2 kV devices.</description><subject>Anodes</subject><subject>Breakdown voltage</subject><subject>Cathodes</subject><subject>Electrical resistance measurement</subject><subject>Insulated gate bipolar transistors</subject><subject>Low voltage</subject><subject>MOSFET circuits</subject><subject>Power MOSFET</subject><subject>Testing</subject><subject>Thyristors</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9784886860569</isbn><isbn>4886860567</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj9tKw0AYhBcPYKl5AL3aBzDx32N2L2OtNVBQaPW2bDb_mmh6YJMqvr2BOjfDMMPAR8gNg4wxsPfl6nX1mHEAllkhNYczMmFW6hQ4sHOS2NxIY7TRoLS9GDvQItVGySuS9P0njJJqXKgJKQq6239jd0dZxunXOx0i7nxDfXfsB4xY03LxsKY_7dDQYzdER5v2o6EHjGEft27n8ZpcBtf1mPz7lLw9zdez53T5sihnxTJtGcgh9WCl4aHmuQtBVxWzuWKa114IWbkK0RorKzVSWFePSUCtePDShFoEr52YktvTb4uIm0Nsty7-bk784g-yeUth</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Spulber, O.</creator><creator>Sweet, M.</creator><creator>Vershinin, K.</creator><creator>Luther-King, N.</creator><creator>De Souza, M.M.</creator><creator>Sankara Narayanan, E.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2001</creationdate><title>A novel, 1.2 kV trench clustered IGBT with ultra high performance</title><author>Spulber, O. ; Sweet, M. ; Vershinin, K. ; Luther-King, N. ; De Souza, M.M. ; Sankara Narayanan, E.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-c09482fd27aff6bb1975162dc334babee9894b59469adee930d52fc48fd3fc6a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Anodes</topic><topic>Breakdown voltage</topic><topic>Cathodes</topic><topic>Electrical resistance measurement</topic><topic>Insulated gate bipolar transistors</topic><topic>Low voltage</topic><topic>MOSFET circuits</topic><topic>Power MOSFET</topic><topic>Testing</topic><topic>Thyristors</topic><toplevel>online_resources</toplevel><creatorcontrib>Spulber, O.</creatorcontrib><creatorcontrib>Sweet, M.</creatorcontrib><creatorcontrib>Vershinin, K.</creatorcontrib><creatorcontrib>Luther-King, N.</creatorcontrib><creatorcontrib>De Souza, M.M.</creatorcontrib><creatorcontrib>Sankara Narayanan, E.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Spulber, O.</au><au>Sweet, M.</au><au>Vershinin, K.</au><au>Luther-King, N.</au><au>De Souza, M.M.</au><au>Sankara Narayanan, E.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A novel, 1.2 kV trench clustered IGBT with ultra high performance</atitle><btitle>Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)</btitle><stitle>ISPSD</stitle><date>2001</date><risdate>2001</risdate><spage>323</spage><epage>326</epage><pages>323-326</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9784886860569</isbn><isbn>4886860567</isbn><abstract>A new Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) is presented. This UMOS controlled thyristor employs a unique "self-clamping" feature to achieve current saturation at high gate voltages and to enable fast turn-off. Above the self-clamping voltage, the shallow trenches are protected from high potentials under all conditions. The simulation results of the TCIGBT based on 1.2 kV NPT technology indicate an improvement of 25% in the on state voltage drop and 28% in the turn-off loss in comparison to the state-of-the-art Trench IGBT. In the Field Stop technology, the forward drop is 1.1 V at 100 A/cm/sup 2/ and the switching losses at 400 K are 4.97 mJ, which are the lowest reported values for 1.2 kV devices.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2001.934620</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1063-6854 |
| ispartof | Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2001, p.323-326 |
| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_934620 |
| source | IEEE Xplore All Conference Series |
| subjects | Anodes Breakdown voltage Cathodes Electrical resistance measurement Insulated gate bipolar transistors Low voltage MOSFET circuits Power MOSFET Testing Thyristors |
| title | A novel, 1.2 kV trench clustered IGBT with ultra high performance |
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