AlGaN/GaN HEMTs for THz Plasma Wave Detection and Emission

We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. This kind FinFET modification (EdgeFET) allowed us to efficiently control the current flow in two-dimensional...

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Bibliographic Details
Main Authors: Sakowicz, M., Sai, P., But, D. B., Cywinski, G., Dub, M., Kasalynas, I., Prystawko, P., Rumyantsev, S., Knap, W.
Format: Conference Proceeding
Language:English
Subjects:
FinFETs
HEMTs
Image edge detection
Logic gates
MODFETs
Plasma waves
Schottky barriers
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Summary:We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. This kind FinFET modification (EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas (2DEG) conduction channel. We present experimental data of sub-THz detection by EdgeFETs. We describe also how it is beneficial for observation of resonant plasma wave THz detection and emission.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz46771.2020.9370535