High Charge Carrier Mobilities and Long Diffusion Lengths in Tin Based Metal Halide Perovskite

Tin (Sn)-based perovskites are promising for lower band gap and tandem solar cells due to their red-shifted band gap towards the infrared region. However, Sn based hybrid metal halide perovskite is well known to suffer rapid photoconductivity decay due to the oxidation of Sn 2+ to Sn 4+ under atmosp...

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Bibliographic Details
Main Authors: Adeyemo, Stephanie O., Kar, Srabani, Silva, Shashini, Jayawardena, Imalka, Silva, Ravi, Joyce, Hannah J.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier mobility
Photoconductivity
Photonic band gap
Photovoltaic cells
Probes
Spectroscopy
Tin
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Summary:Tin (Sn)-based perovskites are promising for lower band gap and tandem solar cells due to their red-shifted band gap towards the infrared region. However, Sn based hybrid metal halide perovskite is well known to suffer rapid photoconductivity decay due to the oxidation of Sn 2+ to Sn 4+ under atmospheric oxygen. Here, the charge carrier dynamics of tin based metal halide perovskite is investigated using optical pump-terahertz probe (OPTP) spectroscopy. Also, the performance of the perovskite films at different annealing temperatures is compared and the best performing temperature is identified. The Sn based perovskite films exhibited a remarkable charge carrier mobility and diffusion length.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz46771.2020.9370604