mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process

• Main Authors: Yu, Qiang, Rami, Said, Waldemer, James, Ma, Yunzhe, Neeli, Vijaya, Garrett, Jeffrey, Liu, Guannan, Koo, Jabeom, Marulanda, Mauricio, Morarka, Saurabh, Ravikumar, Surej, Yeh, Yi-Shin, Chou, Jessica, Brown, Thomas, Rane, Triveni, Nieva, Carlos, Ali, Dyan, Joglekar, Sameer, Armstrong, Mark, Wahl, Jeremy, Paulson, Leif, Dogiamis, Georgios, Monroe, Nathan, Han, Ruonan, Lee, Hyung-Jin, Fu, Hui, Sell, Bernhard, Karl, Eric, Zhang, Ying
• Format: Conference Proceeding
• Language: English
• Subjects: Inductance measurement; Loss measurement; Metals; Radio frequency; Semiconductor device measurement; Transistors; Transmission line measurements
• ISSN: 2156-017X
• DOI: 10.1109/IEDM13553.2020.9372105

This paper presents the recent mmWave and sub-THz oriented technology developments as part of RF design-technology co-optimization (DTCO) efforts in Intel 22nm FinFET process (22FFL). Several back-end-of-line (BEOL) and front-end-of-line (FEOL) improvements have been implemented for high frequency applications. In the newly developed BEOL, ExpressVia is introduced, which allows direct transistor connection to thick metal. Continuous via and 3+1 thick metal layers are enabled for design flexibility. The high performance RF transistor (RF HP) is optimized with the new BEOL and characterized at top metal. Additional process improvements in high power RF device (HyPowerFF) and varactors are also implemented. These BEOL and FEOL improvements enable high performance, innovative mmWave and sub-THz circuits and systems.