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High efficiency, large area, InGaAs/InPAs thermophotovoltaic cells

Thermophotovoltaic (TPV) cells are a class of photovoltaic devices designed to convert radiant heat energy (/spl lambda/ > 1.5 /spl mu/m) to electrical power through the use of low bandgap (/spl sim/ 0.5 eV) semiconductor material systems. Efficiencies in a TPV system may be enhanced by matching...

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Main Authors:	Siergiej, R.R., Wernsman, B., Derry, S.A., Wehrer, R.J., Link, S.D., Palmisiano, M.N., Riley, D.R., Murray, C.S., Newman, F., Hills, J.
Format:	Conference Proceeding
Language:	English
Subjects:	Gold Indium gallium arsenide Indium phosphide Integrated circuit interconnections Photonic band gap Photovoltaic cells Power conversion Semiconductor diodes Substrates Temperature
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creator	Siergiej, R.R. Wernsman, B. Derry, S.A. Wehrer, R.J. Link, S.D. Palmisiano, M.N. Riley, D.R. Murray, C.S. Newman, F. Hills, J.
description	Thermophotovoltaic (TPV) cells are a class of photovoltaic devices designed to convert radiant heat energy (/spl lambda/ > 1.5 /spl mu/m) to electrical power through the use of low bandgap (/spl sim/ 0.5 eV) semiconductor material systems. Efficiencies in a TPV system may be enhanced by matching the spectral output of the radiator to the cell and by reflecting photons with energy h/spl nu/ < E/sub g/ to help maintain heat in the radiator. In this paper, we present an InGaAs/InPAs double heterostructure TPV cell that has achieved a power conversion efficiency of 13.8 % and a power density of 0.54 W/cm/sup 2/ for a graphite radiator operating at 995/spl deg/C and a cell temperature of 27.8/spl deg/C. This represents the best performance of a TPV device for these operating conditions to date.
doi_str_mv	10.1109/DRC.2001.937913
format	conference_proceeding
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Efficiencies in a TPV system may be enhanced by matching the spectral output of the radiator to the cell and by reflecting photons with energy h/spl nu/ < E/sub g/ to help maintain heat in the radiator. In this paper, we present an InGaAs/InPAs double heterostructure TPV cell that has achieved a power conversion efficiency of 13.8 % and a power density of 0.54 W/cm/sup 2/ for a graphite radiator operating at 995/spl deg/C and a cell temperature of 27.8/spl deg/C. 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identifier	ISBN: 9780780370142
ispartof	Device Research Conference. Conference Digest (Cat. No.01TH8561), 2001, p.159-160
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language	eng
recordid	cdi_ieee_primary_937913
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Gold Indium gallium arsenide Indium phosphide Integrated circuit interconnections Photonic band gap Photovoltaic cells Power conversion Semiconductor diodes Substrates Temperature
title	High efficiency, large area, InGaAs/InPAs thermophotovoltaic cells
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