Design and Analysis of Simultaneous Wideband Input/Output Matching Technique for Ultra-Wideband Amplifier

• Published in: IEEE access 2021, Vol.9, p.46800-46809
• Main Author: Wang, To-Po
• Format: Article
• Language: English
• Subjects: Amplifiers; Bandwidths; CMOS; Dividers; Electric potential; High gain; Impedance; Impedance matching; Inductors; Logic gates; Low noise; Low-noise amplifier (LNA); Matching; noise figure (NF); Power consumption; Radio frequency; Resistors; Solenoids; ultra-wideband (UWB); Ultrawideband; Voltage; Wideband
• ISSN: 2169-3536; 2169-3536
• DOI: 10.1109/ACCESS.2021.3068394

A simultaneous wideband input/output matching technique for ultra-wideband (UWB) low-noise amplifier (LNA) is proposed in this paper. Feedback resistors leading the gate inductors combined with inductive dividers at output ports achieve an extended bandwidth and good input/output return loss. Moreover, Q -factor improved vertical solenoid inductors are used in the matching networks for high gain and low noise figure (NF). The proposed matching technique, not only enhances the bandwidth, but also achieves a high gain and a low NF for the fabricated 3.1-10.6-GHz monolithic 180-nm CMOS UWB amplifier. Operating at low supply voltage, the measured power consumption is 18.9 mW, the measured gain of the UWB LNA is 15.02 dB, and the NF is 3.1 dB. Moreover, the measured input/output reflection coefficients S 11 and S 22 are lower than −9.4 dB and −15.8 dB, respectively, covering the full-band UWB frequencies. Compared to previously published full-band 3.1-10.6-GHz 180-nm CMOS UWB LNAs, the proposed LNA measurements demonstrate high gain, low NF, low supply voltage, low power dissipation, and good input/output reflection coefficients.