Low Noise and High Gain RF MOSFETs on Plastic Substrates

A low minimum noise figure (NF min ) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 µm RF MOSFETs on plastic, made by substrate thinning (~30 µm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, u...

Full description

Saved in:
Bibliographic Details
Main Authors: Kao, H. L., Chin, Albert, Huang, C. C., Hung, B. F., Chiang, K. C., Lai, Z. M., McAlister, S. P., Chi, C. C.
Format: Conference Proceeding
Language:English
Subjects:
associated gain
Gain
Inductors
MOSFET
plastic
Plastics
Radio frequency
RF Noise
Silicon
Substrates
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A low minimum noise figure (NF min ) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 µm RF MOSFETs on plastic, made by substrate thinning (~30 µm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1516584