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Low Noise and High Gain RF MOSFETs on Plastic Substrates
A low minimum noise figure (NF min ) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 µm RF MOSFETs on plastic, made by substrate thinning (~30 µm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, u...
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| creator | Kao, H. L. Chin, Albert Huang, C. C. Hung, B. F. Chiang, K. C. Lai, Z. M. McAlister, S. P. Chi, C. C. |
| description | A low minimum noise figure (NF min ) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 µm RF MOSFETs on plastic, made by substrate thinning (~30 µm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate. |
| doi_str_mv | 10.1109/MWSYM.2005.1516584 |
| format | conference_proceeding |
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L. ; Chin, Albert ; Huang, C. C. ; Hung, B. F. ; Chiang, K. C. ; Lai, Z. M. ; McAlister, S. P. ; Chi, C. C.</creator><creatorcontrib>Kao, H. L. ; Chin, Albert ; Huang, C. C. ; Hung, B. F. ; Chiang, K. C. ; Lai, Z. M. ; McAlister, S. P. ; Chi, C. C.</creatorcontrib><description>A low minimum noise figure (NF min ) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 µm RF MOSFETs on plastic, made by substrate thinning (~30 µm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780388451</identifier><identifier>ISBN: 0780388453</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.2005.1516584</identifier><language>eng</language><publisher>IEEE</publisher><subject>associated gain ; Gain ; Inductors ; MOSFET ; plastic ; Plastics ; Radio frequency ; RF Noise ; Silicon ; Substrates</subject><ispartof>IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.295-298</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9387764$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9387764$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kao, H. 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A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.</description><subject>associated gain</subject><subject>Gain</subject><subject>Inductors</subject><subject>MOSFET</subject><subject>plastic</subject><subject>Plastics</subject><subject>Radio frequency</subject><subject>RF Noise</subject><subject>Silicon</subject><subject>Substrates</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9780780388451</isbn><isbn>0780388453</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotjs1KxDAUhYM_YBn7ArrJC7Te5Ca9yVIGZ0aYOmIVdTWknVQjYytNRXx7K_px4Gw-DoexMwG5EGAvysfqucwlgM6FFoU26oAlUlORkRTFIUstGZiCxigtjlgCQtmsUPrphKUxvsGE0khCJ8ys-y9-04fouet2fBVeXvnShY7fLXi5qRZX95H3Hb_duziGhlefdRwHN_p4yo5bt48-_e8Ze5jk-Spbb5bX88t1FqSiMVM0gQoB0GFR1wRS12AabU0jJWpCUf--BWgNtcqTk42x5LQHQtw5nLHzv93gvd9-DOHdDd9bi4aoUPgDuLtGRA</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Kao, H. L.</creator><creator>Chin, Albert</creator><creator>Huang, C. C.</creator><creator>Hung, B. F.</creator><creator>Chiang, K. C.</creator><creator>Lai, Z. M.</creator><creator>McAlister, S. P.</creator><creator>Chi, C. C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>20050101</creationdate><title>Low Noise and High Gain RF MOSFETs on Plastic Substrates</title><author>Kao, H. L. ; Chin, Albert ; Huang, C. C. ; Hung, B. F. ; Chiang, K. C. ; Lai, Z. M. ; McAlister, S. P. ; Chi, C. 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C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kao, H. L.</au><au>Chin, Albert</au><au>Huang, C. C.</au><au>Hung, B. F.</au><au>Chiang, K. C.</au><au>Lai, Z. M.</au><au>McAlister, S. P.</au><au>Chi, C. C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low Noise and High Gain RF MOSFETs on Plastic Substrates</atitle><btitle>IEEE MTT-S International Microwave Symposium Digest, 2005</btitle><stitle>MWSYM</stitle><date>2005-01-01</date><risdate>2005</risdate><spage>295</spage><epage>298</epage><pages>295-298</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>9780780388451</isbn><isbn>0780388453</isbn><abstract>A low minimum noise figure (NF min ) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 µm RF MOSFETs on plastic, made by substrate thinning (~30 µm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2005.1516584</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.295-298 |
| issn | 0149-645X 2576-7216 |
| language | eng |
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| source | IEEE Xplore All Conference Series |
| subjects | associated gain Gain Inductors MOSFET plastic Plastics Radio frequency RF Noise Silicon Substrates |
| title | Low Noise and High Gain RF MOSFETs on Plastic Substrates |
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