Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN

Capacitance deep level transient spectroscopy (DLTS) has been used to characterise undoped GaN epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD) on sapphire substrates. The DLTS measurements were performed by recording full capacitance transients over the 90 to 475 K tempera...

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Bibliographic Details
Main Authors: Umana-Membreno, G.A., Spaargaren, S.M.R., Dell, J.M., Nener, B.D., Faraone, L., Parish, G., Mishra, U.K.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance measurement
Chemical vapor deposition
Epitaxial layers
Gallium nitride
MOCVD
Performance evaluation
Spectroscopy
Substrates
Temperature distribution
Transient analysis
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Summary:Capacitance deep level transient spectroscopy (DLTS) has been used to characterise undoped GaN epitaxial layers grown by metal-organic chemical vapour deposition (MOCVD) on sapphire substrates. The DLTS measurements were performed by recording full capacitance transients over the 90 to 475 K temperature range. Nonexponential emission transients were observed in the samples studied. Modelling shows that these results can be adequately described by a set of traps with a Gaussian distribution of activation energies.
DOI:10.1109/SIM.2000.939190