Ion implantation into GaN: opportunities and problems

We summarize here our recent results on structural and optical characteristics of wurtzite GaN films bombarded under a wide range of implant conditions, as studied by Rutherford backscattering/channeling (RBS/C) spectrometry, transmission electron microscopy (TEM), atomic force microscopy (AFM), and...

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Bibliographic Details
Main Authors: Kucheyev, S.O., Williams, J.S., Jagadish, C., Zou, J., Toth, M., Phillips, M.R., Li, G.
Format: Conference Proceeding
Language:English
Subjects:
Atom optics
Atomic force microscopy
Electron optics
Gallium nitride
Implants
Ion implantation
Optical films
Optical microscopy
Particle beam optics
Transmission electron microscopy
Online Access:Request full text
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Summary:We summarize here our recent results on structural and optical characteristics of wurtzite GaN films bombarded under a wide range of implant conditions, as studied by Rutherford backscattering/channeling (RBS/C) spectrometry, transmission electron microscopy (TEM), atomic force microscopy (AFM), and cathodoluminescence (CL). Our results highlight current problems, associated with implantation-produced disorder, which may hinder a successful application of ion implantation in the fabrication of GaN-based devices.
DOI:10.1109/SIM.2000.939195