Study of optical and electrical properties of GaSb/Al/sub x/Ga/sub 1-x/Sb grown by MOCVD

We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and Al/sub x/Ga/sub 1-x/Sb in the regime x/spl les/0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and Al/sub x/Ga/sub 1-x/Sb compound la...

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Bibliographic Details
Main Authors: Ramelan, A.H., Drozdowicz-Tomsia, K., Goldys, E.M., Tansley, T.L.
Format: Conference Proceeding
Language:English
Subjects:
Australia
Chemical technology
Chemical vapor deposition
Epitaxial growth
High speed optical techniques
III-V semiconductor materials
Laboratories
MOCVD
Molecular beam epitaxial growth
Optical materials
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Summary:We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and Al/sub x/Ga/sub 1-x/Sb in the regime x/spl les/0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and Al/sub x/Ga/sub 1-x/Sb compound layers were grown on GaAs substrate using TMAl, TMGa and TMSb precursors. Growth temperatures in the range of 520/spl deg/C to 680/spl deg/C and V/III ratios between 1 to 5 have been investigated.
DOI:10.1109/SIM.2000.939228