Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70/spl deg/ with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low tu...

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Bibliographic Details
Main Authors: Jae-Hoon Lee, Ki-Rock Kwon, Hyung-Ju Lee, Myoung-Bok Lee, Hwa-Il Sea, Dae-Hyuk Kwon, Jin-Sup Kim, Kyu-Man Choi, Sung-Ho Hahm, Jung-Hee Lee
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Cathodes
Diodes
Educational technology
Electric variables
Electron emission
Field emitter arrays
Low voltage
Microelectronics
Oxidation
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Summary:Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70/spl deg/ with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 /spl mu/A/50tips at V/sub AC/ = 50 V and V/sub GC/ = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 /spl mu/A/50tips at V/sub AC/ = 50 V and V/sub GC/ = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior.
DOI:10.1109/IVMC.2001.939697