Diamond field emission triode with low gate turn-on voltage and high gain

A diamond field emission triode with very low gate turn-on voltage of 10 V and high gain factor of 250 is reported. The gated diamond triode was fabricated with a self-aligning gate technique on a silicon-on-insulator (SOI) wafer. The I/sub a/-V/sub g/ plot of emission characteristics with 4 tips sh...

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Bibliographic Details
Main Authors: Wisitsora-At, A., Kang, W.P., Davidson, J.L., Kerns, D.V., Fisher, T.
Format: Conference Proceeding
Language:English
Subjects:
Bonding
Dielectric substrates
Electron emission
Etching
Fabrication
Low voltage
Microelectronics
Silicon on insulator technology
Solid state circuits
Temperature
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Summary:A diamond field emission triode with very low gate turn-on voltage of 10 V and high gain factor of 250 is reported. The gated diamond triode was fabricated with a self-aligning gate technique on a silicon-on-insulator (SOI) wafer. The I/sub a/-V/sub g/ plot of emission characteristics with 4 tips shows a very low gate turn-on voltage of 10 V and high emission current of 6 /spl mu/A at gate voltage of 20 V. I/sub a/-V/sub a/ plots of emission characteristics demonstrate the desired saturation behavior of a field emission transistor with a high voltage gain of 250. The low turn-on gate voltage and high gain factor is comparable to solid-state devices, confirming that the diamond field emission triode has significant potential for IC-compatible vacuum microelectronic applications and beyond.
DOI:10.1109/IVMC.2001.939765