Mostly Passive Δ - Σ ADC with a-IGZO TFTs for Flexible Electronics

This paper presents a novel mostly passive Δ-Σ ADC using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). The ADC circuit consists of passive elements (resistors and capacitors), a novel dynamic comparator, a D-Flip Flop and a pseudo-CMOS BS inverter. In-house oxide TFT mod...

Full description

Saved in:
Bibliographic Details
Main Authors: Wadhwa, Nishtha, Bahubalindruni, Pydi, Correia, Ana, Goes, Joao, Deb, Sujay, Barquinha, Pedro
Format: Conference Proceeding
Language:English
Subjects:
a-IGZO TFTs
D-Flip Flop
Delta-Sigma ADC
Dynamic Comparator
Electric potential
Indium gallium zinc oxide
Integrated circuit modeling
Inverters
Power supplies
Pseudo-CMOS BS Inverter
Resistors
Thin film transistors
Citations: Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a novel mostly passive Δ-Σ ADC using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). The ADC circuit consists of passive elements (resistors and capacitors), a novel dynamic comparator, a D-Flip Flop and a pseudo-CMOS BS inverter. In-house oxide TFT model is used for circuit simulations in Cadence environment. The proposed ADC results in effective-number-of-bits (ENOB) of 11.2 bits and a figure-of-merit (FOM) of 0.15 µJ/conversion step at 2 kHz sampling frequency with a 10 V power supply. This circuit would find potential applications in biomedical wearable systems, in which, the ADC is probably the most important block.
ISSN:2158-1525
2158-1525
DOI:10.1109/ISCAS51556.2021.9401704