Loading…

Reliability of a DME Ru Semidamascene scheme with 16 nm wide Airgaps

We evaluate the reliability of a semidamascene BEOL scheme with direct metal etched (DME) Ruthenium and 16 nm wide air gaps (AG). First, we show that Ru can be barrierless independent of the type of deposition (ALD, CVD, PVD) using planar capacitor structures with a metal-etch-based flow. We present...

Full description

Saved in:
Bibliographic Details
Main Authors: Lesniewska, A., Pedreira, O. Varela, Lofrano, M., Murdoch, G., van der Veen, M., Dangol, A., Horiguchi, N., Tokei, Zs, Croes, K.
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We evaluate the reliability of a semidamascene BEOL scheme with direct metal etched (DME) Ruthenium and 16 nm wide air gaps (AG). First, we show that Ru can be barrierless independent of the type of deposition (ALD, CVD, PVD) using planar capacitor structures with a metal-etch-based flow. We present TDDB results of semidamascene Ru +AG showing V max to be above 1.5 V for TTF 0.1% of 3 km long lines at 100°C (using power law model). We show no change in resistance after >1200 h during electromigration tests at 330°C with 5 MA/cm 2 stress. We identify increased Joule heating as a reliability concern.
ISSN:1938-1891
DOI:10.1109/IRPS46558.2021.9405192