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Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection

Accurate prediction of device aging plays a vital role in the circuit design of advanced-node CMOS technologies. In particular, hot-carrier induced aging is so complicated that its modeling is often significantly simplified, with focus limited to digital circuits. We present here a novel reliability...

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Main Authors: Vyas, Pratik B., Pimparkar, Ninad, Tu, Robert, Arfaoui, Wafa, Bossu, Germain, Siddabathula, Mahesh, Lehmann, Steffen, Goo, Jung-Suk, Icel, Ali B.
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creator Vyas, Pratik B.
Pimparkar, Ninad
Tu, Robert
Arfaoui, Wafa
Bossu, Germain
Siddabathula, Mahesh
Lehmann, Steffen
Goo, Jung-Suk
Icel, Ali B.
description Accurate prediction of device aging plays a vital role in the circuit design of advanced-node CMOS technologies. In particular, hot-carrier induced aging is so complicated that its modeling is often significantly simplified, with focus limited to digital circuits. We present here a novel reliability-aware compact modeling method that can accurately capture the full post-stress I-V characteristics of the MOSFET, taking into account the impact of drain depletion region on induced defects.
doi_str_mv 10.1109/IRPS46558.2021.9405197
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source IEEE Xplore All Conference Series
subjects Aging
aging simulation
CMOS
Data models
defects
HCI
hot carrier degradation
Integrated circuit modeling
Integrated circuit reliability
MOSFET
Reliability
Robustness
Semiconductor device modeling
SPICE model
title Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection
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