FOUP Contamination and Limitation of Cleaning Procedure : Topic/category CFM, Contamination Free Manufacturing

The Front Opening Unified Pod (FOUP) is used to protect wafers from the Fab environment when they are not being processed. During Gate stack etch, a process known to be a potential source of etch residuals, wafers are separated in a different FOUP to avoid cross contamination. We show that the FOUP...

Full description

Saved in:
Bibliographic Details
Main Authors: van Roijen, Raymond, Fields, Matt, Dyer, Bruce, Messenger, Brian, Deangelis, Ralph
Format: Conference Proceeding
Language:English
Subjects:
Cleaning
Contamination
Humidity
Inspection
Logic gates
Manufacturing
Semiconductor processing
Silicon
Water pollution
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The Front Opening Unified Pod (FOUP) is used to protect wafers from the Fab environment when they are not being processed. During Gate stack etch, a process known to be a potential source of etch residuals, wafers are separated in a different FOUP to avoid cross contamination. We show that the FOUP in which the wafers are placed can itself be a source of contamination. The contamination is found through inspection and it can also be shown to have a detrimental impact on product yield. We argue that outgassing of the FOUP is the source of the contamination and that an established cleaning process is insufficient to completely remove the contamination. The issue is eliminated by a change of type of FOUP used to contain the wafers.
ISSN:2376-6697
DOI:10.1109/ASMC51741.2021.9435733