Electrothermal Modeling, Simulation, and Electromagnetic Characterization of a 3.3 kV SiC MOSFET Power Module

This paper presents the modeling of the electrothermal and electromagnetic behavior in SiC-based multi-chip power modules. The proposed approach is based on a macromodeling technique and is applied to a realistic case-study. Preliminarily, the assembly under analysis was experimentally characterized...

Full description

Saved in:
Bibliographic Details
Main Authors: Scognamillo, C., Catalano, A. P., Borghese, A., Riccio, M., d'Alessandro, V., Breglio, G., Irace, A., Tripathi, R. N., Castellazzi, A., Codecasa, L.
Format: Conference Proceeding
Language:English
Subjects:
Electromagnetic characterization
electrothermal simulations
MOSFET
Multichip modules
Performance evaluation
power module
Power semiconductor devices
SiC MOSFETs
Silicon carbide
Switching frequency
Thermal resistance
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents the modeling of the electrothermal and electromagnetic behavior in SiC-based multi-chip power modules. The proposed approach is based on a macromodeling technique and is applied to a realistic case-study. Preliminarily, the assembly under analysis was experimentally characterized to estimate its parasitics due to electromagnetic interactions. Extremely fast and efficient electrothermal simulations were then performed in a SPICE-like environment. Parasitics and nonlinear thermal effects were accounted for in simulations at high switching frequencies. Results demonstrate that such an approach can be successfully adopted in the design flow of power modules in any device technology.
ISSN:1946-0201
DOI:10.23919/ISPSD50666.2021.9452207