Gate Driver for p-GaN HEMTs with Real-Time Monitoring Capability of Channel Temperature

Normally-off p-GaN HEMTs with Schottky-type gate are becoming of common adoption in both industrial and consumer electronic market. The presence of a gate current with a remarkable dependence on the temperature of the device allows embedding a temperature sensing feature with very fast response into...

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Bibliographic Details
Main Authors: Borghese, A., Riccio, M., Maresca, L., Breglio, G., Irace, A.
Format: Conference Proceeding
Language:English
Subjects:
GaN HEMTS
gate driver
Gate drivers
HEMTs
Logic gates
Prototypes
Schottky diodes
short circuit
Temperature dependence
temperature sensing
Temperature sensors
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Summary:Normally-off p-GaN HEMTs with Schottky-type gate are becoming of common adoption in both industrial and consumer electronic market. The presence of a gate current with a remarkable dependence on the temperature of the device allows embedding a temperature sensing feature with very fast response into the gate-driving circuitry. In this work, a prototype of a gate driver circuit with temperature monitoring capability is presented and its applicability in a broad range of operating conditions is validated by means of a thorough experimental campaign.
ISSN:1946-0201
DOI:10.23919/ISPSD50666.2021.9452317