Loading…

Low FSR Mode-Locked Laser Based on InP-Si3N4 Hybrid Integration

Generation of optical frequency combs (OFC) using semiconductor laser sources has been an active research topic for years, since they offer good performances for many applications without the bulky and expensive aspects of ion doped fiber or crystal based laser sources. In this paper, we demonstrate...

Full description

Saved in:
Bibliographic Details
Published in:Journal of lightwave technology 2021-12, Vol.39 (24), p.7573-7580
Main Authors: Ibrahimi, Yasmine, Boust, Sylvain, Wilmart, Quentin, Paret, Jean-Francois, Garreau, Alexandre, Mekhazni, Karim, Fortin, Catherine, Duport, Francois, Fedeli, Jean-Marc, Sciancalepore, Corrado, Garcia, Stephanie, van Dijk, Frederic
Format: Article
Language:English
Subjects:
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Generation of optical frequency combs (OFC) using semiconductor laser sources has been an active research topic for years, since they offer good performances for many applications without the bulky and expensive aspects of ion doped fiber or crystal based laser sources. In this paper, we demonstrate the generation of low free spectral range mode-locked laser using hybrid III-V/Si 3 N 4 butt coupling. We start by describing the design and the fabrication process of the active R-SOA chip made at our laboratory, and the passive Si 3 N 4 chip having low losses measured to be around 6 dB/m. We then report the integration process and the results of passive mode locking. Our mode-locked laser has a repetition rate of 360 MHz, which is, to the best of our knowledge, the lowest repetition rate achieved for a hybrid integrated mode-locked laser. The frequency comb generated has a 30 dB bandwidth of 2.8 nm (349 GHz). Finally, we show the demonstration of active and harmonic mode locking up to the sixth harmonic.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2021.3089322