Annealing effects on ultrathin MOS capacitors

Silicon oxide with thickness of less than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with a radius of 0.05 cm are deposited on the oxide. High frequency capacitance-voltage (HFC-V), conductance-voltage (G-V) and current-voltage (I-V) c...

Full description

Saved in:
Bibliographic Details
Main Authors: Ng, A.C.-H., Jun Xu, Xu, J.B., Cheung, W.Y.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum
Annealing
Capacitance-voltage characteristics
Frequency
Furnaces
Interface states
MOS capacitors
Nitrogen
Oxidation
Silicon
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Silicon oxide with thickness of less than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with a radius of 0.05 cm are deposited on the oxide. High frequency capacitance-voltage (HFC-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different times and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 450/spl deg/C annealing for 30 minutes has the lowest density of the interface states.
DOI:10.1109/HKEDM.2001.946928