First demonstration of GaAs CMOS

Using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as a gate dielectric and conventional ion implantation for source, drain, and isolation, we have fabricated and demonstrated a GaAs complementary metal-oxide-semiconductor field-effect-transistor (CMOS) inverter.

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Bibliographic Details
Main Authors: Hong, M., Baillargeon, J.N., Kwo, J., Mannaerts, J.P., Cho, A.Y.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
CMOS technology
Dielectric substrates
Dielectrics and electrical insulation
Gallium arsenide
Inverters
Isolation technology
MOSFETs
Power dissipation
Threshold voltage
Online Access:Request full text
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Description
Summary:Using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as a gate dielectric and conventional ion implantation for source, drain, and isolation, we have fabricated and demonstrated a GaAs complementary metal-oxide-semiconductor field-effect-transistor (CMOS) inverter.
DOI:10.1109/ISCS.2000.947180