A mm-wave Gunn diode with an induced channel in active region

In work the mathematical modeling of the GaAs Gunn diode submicrometer of length with inducing by the channel in active region was carried out. The target characteristics and basic physical phenomena proceeding in the given diode were investigated. The carried out researches have shown, that the Gun...

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Bibliographic Details
Main Authors: Arkusha, Yu.V., Prokhorov, E.D., Storozhenko, I.P.
Format: Conference Proceeding
Language:English
Subjects:
Cathodes
Conductivity
Diodes
Electron mobility
Gallium arsenide
Gunn devices
Heterojunctions
Impurities
Mathematical model
Voltage
Online Access:Request full text
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Summary:In work the mathematical modeling of the GaAs Gunn diode submicrometer of length with inducing by the channel in active region was carried out. The target characteristics and basic physical phenomena proceeding in the given diode were investigated. The carried out researches have shown, that the Gunn diode with inducing by the channel in active region is a perspective solid-state active element in a mm-waves.
DOI:10.1109/MSMW.2001.947306